Title :
Circuit level reliability analysis of Cu interconnects
Author :
Alam, Syed M. ; Lip, Gan Chee ; Thompson, Carl V. ; Troxel, Donald E.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Copper (Cu) based interconnect technology is expected to meet some of the challenges of technology scaling in the pursuit of higher performance. However, Cu interconnects are still susceptible to electromigration-induced failure over time. We describe a new hierarchical approach for predicting the reliability of Cu-based interconnects in circuit layouts, and present an RCAD tool, SysRel, for such an analysis. We propose a (jL) product filtering algorithm with a classification of separate via-above and via-below treatments in Cu interconnect trees. After the filtering of immortal trees, a default model is applied to the remaining trees to compute reliability figures for individual units. SysRel utilizes joint stochastic reliability metrics based on the desired lifetime of a chip and combines reliability figures from individual fundamental reliability units. Simulation results with a 32-bit comparator circuit layout demonstrate the significance of our methodology in selectively identifying critical nets and their impacts on overall reliability.
Keywords :
copper; current density; electromigration; electronic design automation; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; Cu; RCAD tool; circuit level reliability analysis; comparator circuit layout; copper based interconnect; critical nets; default model; desired lifetime; electromigration-induced failure; hierarchical approach; interconnect trees; joint stochastic reliability metrics; product filtering algorithm; Bit error rate; Circuit analysis; Computer network reliability; Copper; Current density; Electromigration; Filtering; Gallium nitride; Integrated circuit interconnections; System testing;
Conference_Titel :
Quality Electronic Design, 2004. Proceedings. 5th International Symposium on
Print_ISBN :
0-7695-2093-6
DOI :
10.1109/ISQED.2004.1283680