DocumentCode :
408424
Title :
Leakage control for large fan-in Domino gates using substrate biasing
Author :
Youssef, Ahmed ; Anis, Mohab ; Elmasry, Mohamed
Author_Institution :
VLSI Group, Waterloo Univ., Ont., Canada
fYear :
2003
fDate :
9-11 Dec. 2003
Firstpage :
81
Lastpage :
84
Abstract :
Small area, Low power and high speed circuits are essential components propelling today´s microprocessors. Domino logic gates are basic components in this family. One disadvantage pertaining to domino gates is the trade-off between speed and noise immunity, which is highly affected by leakage currents. In this paper, we propose the usage of reverse bulk node voltage in order to resolve this trade-off, while reducing the active leakage power consumed. A 50% reduction in active leakage power, and 40% saving in gate delay were achieved.
Keywords :
circuit noise; delay circuits; electric current control; logic gates; power consumption; high speed circuit; leakage control; leakage current; leakage power consumption; logic gates; low power circuit; noise; substrate biasing; Circuit noise; Clocks; Equations; Leakage current; MOSFETs; Microprocessors; Temperature; Threshold voltage; Very large scale integration; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
Type :
conf
DOI :
10.1109/ICM.2003.1287727
Filename :
1287727
Link To Document :
بازگشت