Title :
Theoretical investigation of single- and dual-gate metal insulator tunnel transistors
Author :
Shaker, Ahmed ; Zekry, Abdel Halim
Abstract :
In this paper, we investigated a new class of nanometer scale transistors that use the field generated by an applied gate bias to modulate the transmission probability through a tunnel barrier between drain and source. The characteristics of such transistors were studied using a computer simulation. A 2-D Poisson´s equation solver was implemented to calculate the potential distribution using the finite element method. Then, the current was calculated using the transmission coefficient by considering the electron energy distribution. Two forms of the transistors were studied: single-gate MITT and dual-gate MITT. For each form, the key parameters affecting the device operation were studied.
Keywords :
MIM devices; Poisson equation; digital simulation; finite element analysis; nanoelectronics; semiconductor device models; tunnel transistors; 2-D Poissons equation solver; computer simulation; device operation; dual gate metal insulator tunnel transistors; electron energy distribution; finite element method; gate bias; nanometer scale transistors; potential distribution; transmission coefficient; transmission probability; tunnel barrier; Dielectrics and electrical insulation; Electrodes; Electrons; FETs; Finite element methods; MOSFETs; Metal-insulator structures; Schottky barriers; Tunneling; Voltage;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287792