DocumentCode
408473
Title
A new small-signal model of the dual-gate GaAs MESFET
Author
Ibrahim, Ostafa ; Syrett, B. ; Bennet, Jeffrey
Author_Institution
Mil. Tech. Coll., Cairo, Egypt
fYear
2003
fDate
9-11 Dec. 2003
Firstpage
260
Lastpage
263
Abstract
A new small-signal model of the dual-gate GaAs MESFET (DGFET) is described. The model does not deal with the DGFET as a cascode connection of two single-gate FET (SGFET) parts but as a four-port device. The model parameters are extracted directly from the measured s-parameters. The new small-signal model is tested on sixteen devices at many bias conditions over the frequency range 0.5-26.5 GHz. The calculated S-parameters using the new small-signal model show very good agreement with the measured data.
Keywords
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; 0.5 to 26.5 GHz; GaAs; cascode connection; dual gate GaAs MESFET; four port device; s-parameters; single gate FET; small signal model; Admittance; Capacitors; Delay effects; Educational institutions; Electrical resistance measurement; Gallium arsenide; MESFETs; Scattering parameters; Tellurium; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN
977-05-2010-1
Type
conf
DOI
10.1109/ICM.2003.1287794
Filename
1287794
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