DocumentCode
408508
Title
A new semi-empirical model for funneling assisted drain currents due to single events
Author
Abadir, G.B. ; Fikry, W. ; Ragai, H.F. ; Omar, O.A.
Author_Institution
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
fYear
2003
fDate
9-11 Dec. 2003
Firstpage
391
Lastpage
394
Abstract
We present a new semi-empirical model for the funneling-assisted currents due to single events. It is then used to predict the collected charge due to the funneling process. Comparison with previously published simulated data using ISE CAD tools has shown that the relative error in the collected charge prediction is of about 0.8%. This model can be used for circuit simulations in space applications.
Keywords
MOSFET; circuit simulation; semiconductor device models; circuit simulations; funneling assisted drain currents; funneling process; relative error; semiempirical model; Charge carrier density; Charge carrier processes; Circuit simulation; Delay; Electrons; Particle tracking; Plasma density; Plasma materials processing; Predictive models; Radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN
977-05-2010-1
Type
conf
DOI
10.1109/ICM.2003.1287847
Filename
1287847
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