DocumentCode :
409047
Title :
Tunneling ionization bunch length monitor for the ultrarelativistic compressed electron beams
Author :
Murokh, A.
Author_Institution :
UCLA, Los Angeles, CA, USA
Volume :
4
fYear :
2003
fDate :
12-16 May 2003
Firstpage :
2568
Abstract :
The electric field intensity of the compressed ultrarelativistic electron beams is approaching GV/m levels, which is sufficient to cause observable tunneling effect in the low band gap materials. In this article the tunneling ionization rate is estimated for the experimentally available electron beam parameters, and a proposed proof of principle experiment is outlined. Tunneling effect has exponential dependence on the electric field strength; thus being very sensitive to the electron beam peak current. This nonlinear dependence opens up a possibility to construct inexpensive, single shot and nondestructive peak current diagnostics for the ultrarelativistic compressed electron beams.
Keywords :
doping; particle beam bunching; particle beam diagnostics; relativistic electron beams; semiconductors; tunnelling; compressed ultrarelativistic electron beams; doped semiconductor materials; electric field intensity; electric field strength; electron beam peak current; exponential dependence; low band gap materials; nondestructive diagnostics; nonlinear dependence; observable tunneling effect; quantum tunneling; single shot peak current diagnostics; tunneling ionization bunch length monitor; tunneling ionization rate; Atomic beams; Cameras; Current measurement; Electron beams; Feedback; Ionization; Monitoring; Radio frequency; Shape measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Particle Accelerator Conference, 2003. PAC 2003. Proceedings of the
ISSN :
1063-3928
Print_ISBN :
0-7803-7738-9
Type :
conf
DOI :
10.1109/PAC.2003.1289191
Filename :
1289191
Link To Document :
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