DocumentCode
409047
Title
Tunneling ionization bunch length monitor for the ultrarelativistic compressed electron beams
Author
Murokh, A.
Author_Institution
UCLA, Los Angeles, CA, USA
Volume
4
fYear
2003
fDate
12-16 May 2003
Firstpage
2568
Abstract
The electric field intensity of the compressed ultrarelativistic electron beams is approaching GV/m levels, which is sufficient to cause observable tunneling effect in the low band gap materials. In this article the tunneling ionization rate is estimated for the experimentally available electron beam parameters, and a proposed proof of principle experiment is outlined. Tunneling effect has exponential dependence on the electric field strength; thus being very sensitive to the electron beam peak current. This nonlinear dependence opens up a possibility to construct inexpensive, single shot and nondestructive peak current diagnostics for the ultrarelativistic compressed electron beams.
Keywords
doping; particle beam bunching; particle beam diagnostics; relativistic electron beams; semiconductors; tunnelling; compressed ultrarelativistic electron beams; doped semiconductor materials; electric field intensity; electric field strength; electron beam peak current; exponential dependence; low band gap materials; nondestructive diagnostics; nonlinear dependence; observable tunneling effect; quantum tunneling; single shot peak current diagnostics; tunneling ionization bunch length monitor; tunneling ionization rate; Atomic beams; Cameras; Current measurement; Electron beams; Feedback; Ionization; Monitoring; Radio frequency; Shape measurement; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 2003. PAC 2003. Proceedings of the
ISSN
1063-3928
Print_ISBN
0-7803-7738-9
Type
conf
DOI
10.1109/PAC.2003.1289191
Filename
1289191
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