• DocumentCode
    409047
  • Title

    Tunneling ionization bunch length monitor for the ultrarelativistic compressed electron beams

  • Author

    Murokh, A.

  • Author_Institution
    UCLA, Los Angeles, CA, USA
  • Volume
    4
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    2568
  • Abstract
    The electric field intensity of the compressed ultrarelativistic electron beams is approaching GV/m levels, which is sufficient to cause observable tunneling effect in the low band gap materials. In this article the tunneling ionization rate is estimated for the experimentally available electron beam parameters, and a proposed proof of principle experiment is outlined. Tunneling effect has exponential dependence on the electric field strength; thus being very sensitive to the electron beam peak current. This nonlinear dependence opens up a possibility to construct inexpensive, single shot and nondestructive peak current diagnostics for the ultrarelativistic compressed electron beams.
  • Keywords
    doping; particle beam bunching; particle beam diagnostics; relativistic electron beams; semiconductors; tunnelling; compressed ultrarelativistic electron beams; doped semiconductor materials; electric field intensity; electric field strength; electron beam peak current; exponential dependence; low band gap materials; nondestructive diagnostics; nonlinear dependence; observable tunneling effect; quantum tunneling; single shot peak current diagnostics; tunneling ionization bunch length monitor; tunneling ionization rate; Atomic beams; Cameras; Current measurement; Electron beams; Feedback; Ionization; Monitoring; Radio frequency; Shape measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Particle Accelerator Conference, 2003. PAC 2003. Proceedings of the
  • ISSN
    1063-3928
  • Print_ISBN
    0-7803-7738-9
  • Type

    conf

  • DOI
    10.1109/PAC.2003.1289191
  • Filename
    1289191