Understanding Ground-State Quenching in Quantum-Dot Lasers

Author

Rohm, Andre ; Lingnau, B. ; Ludge, K.

Author_Institution

Inst. of Theor. Phys., Tech. Univ. of Berlin, Berlin, Germany

Volume

51

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

1

Lastpage

11

Abstract

Quantum-dot lasers can exhibit simultaneous ground- and excited-state lasing. With increasing pump current, a quenching of the ground-state lasing intensity is sometimes observed. The causes for this are investigated, and its dependence on temperature, gain, and electron-hole asymmetry is studied via an analytical approach. A numerical model based on the semiconductor Bloch equations with a set of rate equations for electrons and holes is used for validation. We also investigate the influence of doping and different cavity lengths on the two-state lasing dynamics. We find that ground-state quenching is more common in p-doped, short cavity devices with low gain.

Keywords

ground states; laser cavity resonators; numerical analysis; optical pumping; quantum dot lasers; cavity lengths; doping; electron-hole asymmetry; ground-state lasing intensity; ground-state quenching; numerical model; pump current; quantum-dot lasers; rate equations; semiconductor Bloch equations; temperature dependence; two-state lasing dynamics; Charge carrier processes; Electron optics; Numerical models; Optical pumping; Optical scattering; Quantum dots; indium gallium arsenide; laser theory; quantum dot lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2370793

Filename

6955774