Thermal oxidation-induced strain in silicon nanobeams

Author

Pyzyna, A.M. ; Clarke, D.R. ; MacDonald, N.C.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

2004

Firstpage

189

Lastpage

192

Abstract

Single crystal silicon beams of sub-micron thickness were fabricated from the device layer of SIMOX type silicon-on-insulator wafers. The beams were thermally oxidized at 950°C in dry oxygen and the oxide was subsequently removed. As a result of the oxidation, there is a small but measurable accumulation of strain, which increases with the reduction of the beams´ thickness. The cause of this strain is not presently known, but A model is proposed based on the injection of self-interstitial silicon atoms from the oxidation front.

Keywords

elemental semiconductors; interstitials; nanostructured materials; oxidation; silicon; 950 degC; SIMOX; Si; beam thickness; self-interstitial silicon atoms; separation by implantation of oxygen; silicon nanobeams; silicon-on-insulator wafers; single crystal silicon beams; thermal oxidation induced strain; Capacitive sensors; Compressive stress; Crystalline materials; Etching; Optical interferometry; Oxidation; Scanning electron microscopy; Silicon on insulator technology; Strain measurement; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290554

Filename

1290554