DocumentCode :
409975
Title :
K band two λ/2 resonators micromachined filter design
Author :
Li, Xiuping ; Gao, Jianjun ; Law, Choi Look ; Aditya, Shed
Author_Institution :
Positioning & Wireless Technol. Center, Nanyang Technol. Univ., Singapore
Volume :
2
fYear :
2003
fDate :
15-18 Dec. 2003
Firstpage :
1106
Abstract :
This paper describes a micromachined 2-layer structure bandpass filter design at K band. This two-layer structure with ground plane on the upper wafer and solid substrate supporting the circuit is much stronger and much easier to be fabricated on GaAs substrate compared with 3-layer membrane structure. The microwave performances of the filter show less than 1dB insertion loss and good enough stop band rejection for RFID application.
Keywords :
arsenic compounds; band-pass filters; band-stop filters; dielectric resonator filters; gallium compounds; micromachining; micromechanical devices; microwave filters; millimetre wave filters; resonators; substrates; waveguide filters; 18 to 27 GHz; GaAs; GaAs substrate; K band; RFID application; bandpass filter design; ground plane; insertion loss; micromachined two-layer structure; microwave performance; resonator; solid substrate; stop band rejection; wafer substrate; Band pass filters; Bandwidth; Biomembranes; Capacitance; Dielectric losses; Dielectric substrates; Equivalent circuits; Fabrication; Gallium arsenide; Resonator filters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information, Communications and Signal Processing, 2003 and Fourth Pacific Rim Conference on Multimedia. Proceedings of the 2003 Joint Conference of the Fourth International Conference on
Print_ISBN :
0-7803-8185-8
Type :
conf
DOI :
10.1109/ICICS.2003.1292631
Filename :
1292631
Link To Document :
بازگشت