DocumentCode
410177
Title
Low-level effects in SBARs and their application to device optimisation
Author
Loebl, H.P. ; Metzmacher, C. ; Milsom, R.F. ; Mauczok, R. ; Brand, W. ; Lok, P. ; van Straten, F. ; Tuinhout, A.
Author_Institution
Philips Res. Lab., Aachen, Germany
Volume
1
fYear
2003
fDate
5-8 Oct. 2003
Firstpage
182
Abstract
Solidly mounted bulk acoustic wave resonator (SBAR) filters for 1.9 GHz, 3 GHz, and 7.9 GHz have been made. For the 1.9 GHz filter a 1-D analytical electro-acoustic model combined with electrical parasitics is shown to accurately predict most features of resonator and filter behaviour. This paper describes how the analysis of these and other low-level effects in resonators allows material data to be determined and spurious modes and related acoustic loss mechanisms to be investigated.
Keywords
acoustic resonator filters; acoustoelectric effects; bulk acoustic wave devices; 1.9 GHz; 1D analytical electroacoustic model; 3 GHz; 7.9 GHz; acoustic loss mechanisms; device optimisation; electrical parasitics; low level effects; solidly mounted bulk acoustic wave resonator filter; Acoustic materials; Acoustic waves; Insertion loss; Laboratories; Magnetic materials; Optical resonators; Predictive models; Radio frequency; Resonator filters; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN
0-7803-7922-5
Type
conf
DOI
10.1109/ULTSYM.2003.1293384
Filename
1293384
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