Title :
Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode
Author :
Acerbi, Fabio ; Frera, A.D. ; Tosi, Alberto ; Zappa, Franco
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Inf. e Bioingegneria, Milan, Italy
Abstract :
We characterize three different quenching circuits for InGaAs/InP single-photon avalanche diodes (SPADs) operated in gated mode: i) a simple passive quenching circuit; ii) an active quenching circuit; and iii) a fast active quenching circuit. For each of these, we acquire the shape of the avalanche current, at different excess biases, by reconstructing the waveform of the photons emitted from the detector during an avalanche and we simultaneously measure the afterpulsing probability and the dependence of dark count rate on gate period (to estimate the maximum count rate). We prove that the avalanche charge reduction is in agreement with the reduction of afterpulsing probability, giving a four-time decrease in afterpulsing when employing the fast active quenching circuit compared to the simple passive quenching circuit.
Keywords :
III-V semiconductors; active networks; avalanche photodiodes; gallium arsenide; indium compounds; passive networks; pulse circuits; InGaAs-InP; SPAD; after-pulsing reduction; avalanche charge reduction; avalanche current; fast active quenching circuit; passive quenching circuit; single photon avalanche diode; Current measurement; Detectors; Ignition; Indium gallium arsenide; Indium phosphide; Logic gates; Photonics; Afterpulsing; avalanche charge; avalanche photodiode; optical crosstalk; quenching circuit; single photon; single-photon avalanche diode;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2013.2260726