Nonlinear THz Pump/THz Probe Spectroscopy of n-doped III–V Semiconductors

Author

I-Chen Ho ; Xi-Cheng Zhang

Author_Institution

Center for Terahertz Res., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

19

Issue

1

fYear

2013

fDate

Jan.-Feb. 2013

Firstpage

8401005

Lastpage

8401005

Abstract

By utilizing a terahertz (THz) pump/THz probe spectroscopy, the coherent plasma resonances in n-doped III-V semiconductors are clearly demonstrated through the modulations of reflection. The interaction between energetic electrons and the phonon field on the subpicosecond time scale is verified, and it is shown that this interaction applies for acoustic phonon modes. This study provides a unique method to diagnose the overtones of two transverse acoustic phonon responses of semiconductors in a nonlinear regime, and therefore it will contribute to material fingerprinting.

Keywords

III-V semiconductors; optical pumping; phonon spectra; surface plasmon resonance; terahertz spectroscopy; acoustic phonon modes; coherent plasma resonances; material fingerprinting; n-doped III-V semiconductors; nonlinear terahertz pump; phonon field; terahertz probe spectroscopy; transverse acoustic phonon responses; Educational institutions; Oscillators; Phonons; Plasmas; Probes; Reflection; Ultrafast optics; Nonlinearities; plasma; pump/probe; terahertz (THz);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2012.2218276

Filename

6298927