Voltage-scaled integrated circuit technologies enable a new generation of power supply control IC´s

Author

Benson, Brad ; Gutierrez, Neil ; Pace, W. David

Author_Institution

Nat. Semicond., Santa Clara, CA, USA

Volume

1

fYear

2004

fDate

2004

Firstpage

252

Abstract

This paper introduces a family of three voltage-scaled BiCMOS-DMOS integrated circuit technologies that integrate 45 V, 80 V or 100 V DMOS power switches with CMOS control logic and BiCMOS analog cells. A dual gate driver IC and forward active clamp PWM controller are presented as examples of the function and performance afforded by these new power IC technologies. The 5 A BiCMOS output stage and split-supply operation for negative VGS drive are key attributes of the gate driver. The controller features voltage feed-forward voltage-mode PWM with 100 V start-up regulator, 3 A BiCMOS gate driver and 40 ns current limit response time.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; power supply circuits; pulse width modulation; 100 V; 3 A; 40 ns; 45 V; 5 A; 80 V; BiCMOS analog cells; CMOS control logic; DMOS power switches; VGS drive; active clamp PWM controller; complementary metal-oxide-semiconductor; double-diffused metal-oxide semiconductor; dual gate driver IC; power supply control; pulse width modulation; start-up regulator; voltage feed-forward voltage-mode PWM; voltage-scaled BiCMOS-DMOS integrated circuit technology; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS logic circuits; Clamps; Driver circuits; Integrated circuit technology; Power generation; Power supplies; Pulse width modulation; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE

Print_ISBN

0-7803-8269-2

Type

conf

DOI

10.1109/APEC.2004.1295818

Filename

1295818