DocumentCode :
411395
Title :
IPEM based high frequency PFC
Author :
Lu, Bing ; Lu, Zhiguo ; Yang, Liyu ; Dong, Wei ; Lee, F.C. ; Liang, Zhengxian ; van Wyk, J.D. ; Chen, Zhou ; Boroyevich, D.
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume :
2
fYear :
2004
fDate :
2004
Firstpage :
1200
Abstract :
For the high frequency power factor correction applications, the parasitic on the circuit begins to be the bottle net for the circuit performance. In this paper, the parasitic effects on the power factor correction circuit are analyzed. To minimize the circuit parasitic, IPEM concept is used. Based on the newly developed PFC IPEM, experimental results show the benefits both from converter efficiency improvement and device voltage stress reduction.
Keywords :
power convertors; power factor correction; IPEM concept; circuit performance; converter efficiency; high frequency PFC; integrated power electronics module; parasitic effects; power factor correction circuit; voltage stress reduction; MOSFET circuits; Power factor correction; Power system harmonics; Schottky diodes; Silicon carbide; Stress; Switches; Switching frequency; Switching loss; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN :
0-7803-8269-2
Type :
conf
DOI :
10.1109/APEC.2004.1295975
Filename :
1295975
Link To Document :
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