Title :
Terahertz carrier dynamics and dielectric response of n-type GaN
Author :
Azad, Abul K. ; Zhang, W. ; Grischkowsky, D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
Abstract :
We report the first characterization of the complex conductivity and absorption of an n-type GaN freestanding crystal by terahertz time-domain spectroscopy (THz-TDS) over the frequency range from 0.1 to 4 THz. The measured conductivity was well fit by Drude theory.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; optical conductivity; wide band gap semiconductors; 0.1 to 4 THz; Drude theory; GaN; THz-TDS; complex conductivity; conductivity measurement; n-type GaN; n-type GaN freestanding crystal absorption; terahertz carrier dynamics; terahertz dielectric response; terahertz time-domain spectroscopy; Absorption; Conductivity; Dielectrics; Frequency; Gallium nitride; Optical materials; Optical transmitters; Power measurement; Spectroscopy; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
