Title :
Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers
Author :
Martinelli, R.U. ; Kim, J.G. ; Belenky, G.L. ; Shterengas, L.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary´s miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 /spl mu/m. The 2.5-/spl mu/m devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm/sup -1/. This design should produce room-temperature diode lasers with wavelengths greater than 3 /spl mu/m.
Keywords :
III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; indium compounds; optical design techniques; quantum well lasers; semiconductor quantum wells; ternary semiconductors; 1 W; 2.5 micron; 2.8 micron; 293 to 298 K; 5 W; AlGaAsSb; AlGaAsSb-InGaAsSb-GaSb; GaSb; InGaAsSb; antimonide-based lasers; compressively strained InGaAsSb quantum wells; internal losses; modal gain measurement; quantum well diode lasers; quantum-well diode lasers; quaternary´s miscibility gap; room-temperature devices; type-I lasers; Capacitive sensors; Diode lasers; Gain measurement; Optical design; Optical losses; Optical pulses; Optical waveguides; Power lasers; Quantum well lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
