Title :
Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs
Author :
Liu, Kai ; Krotkus, Arunas ; Bertulis, K. ; McMahon, J. Jay ; Xu, Jingzhou ; Zhang, X.-C.
Author_Institution :
Center for Terahertz Res., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.
Keywords :
III-V semiconductors; beryllium; electric fields; gallium arsenide; high-speed optical techniques; microwave photonics; semiconductor lasers; submillimetre wave generation; Be; Be-doped low-temperature-grown; GaAs; GaAs terahertz emitters; LTG-GaAs layer; enhanced electric field; radiation power; surface depletion layer; terahertz wave emission; Charge carrier density; Delay effects; Gallium arsenide; Optical pulse generation; Optical pumping; Optical surface waves; Power generation; Stimulated emission; Surface emitting lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
