Neutron transmutation doped Thz p-Ge laser

Author

Peale, R.E. ; Nelson, E.W. ; Flitsiyan, E.S. ; Muravjov, A.V. ; Dolguikh, M. ; Kleckley, S.H. ; Vernetson, W.G.

Author_Institution

Dept. of Phys., Central Florida Univ., Orlando, FL, USA

fYear

2003

fDate

6-6 June 2003

Abstract

Amplified terahertz radiation (1.5 - 4.2 THz, 70 - 200 micron) in p-Ge is generated on transitions between light- and heavy-hole sub-bands in crossed electric and magnetic fields. Population inversion builds for certain E/B ratios, when light holes accumulate on closed trajectories below the optical phonon energy, while heavy holes scatter on optical phonons. Traditional p-Ge lasers output up to 10 W for cm/sup 3/ active volume and microsecond pulse duration. The saturation intensity within the active crystal can reach kW/cm/sup 2/, but such is unachievable at the output because of low gain. This is caused in part by the inhomogeneous doping of the melt-grown germanium traditionally used.

Keywords

elemental semiconductors; germanium; high-speed optical techniques; semiconductor doping; semiconductor lasers; submillimetre wave generation; 1.5 to 4.2 THz; 10 W; 70 to 200 micron; Ge; Thz p-Ge laser; active crystal; amplified terahertz radiation; crossed electric fields; crossed magnetic fields; heavy holes scatter; heavy-hole sub-band; inhomogeneous doping; light-hole sub-band; melt-grown germanium; microsecond pulse duration; neutron transmutation; optical phonon energy; saturation intensity; Doping; Laser transitions; Light scattering; Magnetic fields; Neutrons; Optical pulses; Optical saturation; Optical scattering; Phonons; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-748-2

Type

conf

Filename

1297753