Title :
Novel technologies for high-brightness AlGaInP LEDs
Author_Institution :
Osram Opto Semicond., Regensburg, Germany
Abstract :
The III-V semiconductor system AlGaInP is today the only material suitable for the fabrication of high-brightness LEDs in the yellow to red color range. In this paper, we will compare a number of new approaches for high-brightness LEDs, including the thin-film technology. The discussion will include the potential of various approaches as well as their benefits and drawbacks.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; thin film devices; AlGaInP; III-V semiconductor system; LED; fabrication; red region; thin-film technology; yellow region; Brightness; Electromagnetic wave absorption; Fabrication; Gallium arsenide; Lattices; Light emitting diodes; Photonic band gap; Semiconductor materials; Substrates; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
