DocumentCode :
411718
Title :
Gan-based laser diodes with low-threshold current fabricated directly on masked sapphire substrate
Author :
Kunisato, T. ; Kano, T. ; Ohbo, H. ; Hayashi, N. ; Nomura, Y. ; Yamaguchi, T. ; Bata, M. ; Shono, M. ; Sawada, M. ; Ibaraki, A.
Author_Institution :
Materials and Devices Development Center, SANYO Electric Co., Ltd.
fYear :
2003
fDate :
6-6 June 2003
Firstpage :
245
Lastpage :
246
Keywords :
Aluminum gallium nitride; Buffer layers; Dielectric materials; Dielectric substrates; Diode lasers; Gallium nitride; Optical device fabrication; Optical materials; Semiconductor lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1297799
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=411718
