DocumentCode :
411758
Title :
Influence of localised states on the characteristics of GaN/InGaN QW-LEDs emitting at 480nm
Author :
Pope, I.A. ; Smowton, P.M. ; Blood, P. ; Thomson, J.D. ; Kappers, M.
Author_Institution :
University of Cambridge
fYear :
2003
fDate :
6-6 June 2003
Firstpage :
348
Lastpage :
350
Keywords :
Absorption; Current density; Extraterrestrial measurements; Gallium nitride; Light emitting diodes; Photonic integrated circuits; Pulse measurements; Quantum computing; Radiative recombination; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1297841
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=411758
بازگشت