411759

Current status on GaN-based light emitting devices

Iwayama, S. ; Kato, H. ; Yamasaki, S. ; Tezen, Y. ; Minoura, J. ; Nagai, S. ; Asai, M. ; Watanabe, H. ; Kojima, A. ; Arazoe, N. ; Nakamura, R. ; Hatano, T. ; Koike, M. ; Tomita, K. ; Kachi, T.

Toyota Central R&D Laboratories, Inc.,

2003

6-6 June 2003

351

353

Bonding; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Leg; Mirrors; Semiconductor lasers; Substrates; Threshold current;

English

ieee

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Baltimore, MD, USA

1-55752-748-2

conf

1297842