Title :
Anomalous nonlinear photoconductivity in a GaN-based heterostructure
Author :
Zeller, J. ; Sheik-Bahae, M. ; Rudolph, W.
Author_Institution :
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM, USA
Abstract :
The nonlinear (3/sup rd/ to 4/sup th/ order) as well as linear photoconductivity in a GaN/InGaN heterostructure is investigated using femtosecond pulses in the IR and near-UV. The noninteger intensity dependence is explained by a model including defect density fluctuations and nonlinear carrier transport phenomena.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; photoconductivity; GaN; GaN/InGaN heterostructure; IR; defect density fluctuation; femtosecond pulses; near-UV; noninteger intensity; nonlinear carrier transport; nonlinear photoconductivity; Astronomy; Extraterrestrial measurements; Gallium nitride; Laser modes; Nonlinear optics; Optical sensors; Photoconductivity; Physics; Quantum well lasers; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
