Very low threshold current GaInNAs quantum well lasers operating at 1.30 /spl mu/m

Long-wavelength GaInNAs lasers grown on GaAs are very attractive devices for the application of optical communication. Recently, excellent high temperature characteristics and low threshold current density operation have been reported. However, the threshold current is still not low enough for practical applications at 1.3 /spl mu/m region. This is mainly due to the difficulty of forming an effective current confinement structure. In this paper, we present successful operation of GalnP buried heterostructure devices emitting over 1.3 /spl mu/m with very low threshold current ever reported. Organometallic vapor phase epitaxy (OMVPE) selective buried growth was used for the fabrication of the device.