Quantum dot device technology on GaAs: DFB lasers, tunable lasers, and SOA´s

Author

Lester, L.F. ; Gray, A.L. ; Zhang, L. ; Newell, T.C. ; Wang, R. ; Nabulsi, F. ; Olona, L. ; Varangis, P.M. ; Bakonyi, Z. ; Onishchukov, G. ; Tünnermann, A. ; Su, H. ; Stintz, A. ; Zou, J. ; Malloy, K.J.

Author_Institution

Zia Laser, Inc., Albuquerque, NM, USA

fYear

2003

fDate

6-6 June 2003

Abstract

The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; laser cavity resonators; laser tuning; quantum dot lasers; semiconductor optical amplifiers; 18 dB; 9 ps; 90 nm; DFB lasers; GaAs; SOA; external cavity tunable lasers; feedback resistance; quantum dot device technology; quantum dot materials technology; semiconductor optical amplifiers; temperature-insensitive slope efficiency; versatility; Gain; Gallium arsenide; Laser feedback; Laser tuning; Materials science and technology; Optical feedback; Quantum dot lasers; Semiconductor lasers; Semiconductor optical amplifiers; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-748-2

Type

conf

Filename

1297977