Title :
High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy
Author :
Tukiainen, A.T. ; Toikkanen, L.J. ; Hirvonen, I.A.T. ; Pessa, M. ; Tihanyi, P.L.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Finland
Abstract :
We report on a very high-power red laser diodes producing over two watts continuous-wave operation. Preliminary tests show no catastrophic optical damage. Devices have a low threshold current density and high slope efficiency.
Keywords :
current density; molecular beam epitaxial growth; semiconductor lasers; 2.1 W; 650 nm; catastrophic optical damage; continuous wavelength operation; high-power red laser diodes; laser diodes; slope efficiency; solid-source molecular beam epitaxy; threshold current density; Biomedical optical imaging; Diode lasers; Molecular beam epitaxial growth; Optical buffering; Optical devices; Optical pumping; Optical recording; Power generation; Testing; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
