DocumentCode
411895
Title
1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers
Author
Balakrishnan, G. ; Dawson, L.R. ; Huffaker, D.L. ; Xu, Huifang
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6/spl mu/m is observed along with first-excited state lasing at /spl lambda//spl sim/1.34 /spl mu/m.
Keywords
III-V semiconductors; aluminium compounds; excited states; gallium arsenide; gallium compounds; ground states; indium compounds; laser beams; photoluminescence; quantum dot lasers; semiconductor quantum dots; spontaneous emission; 1.34 micron; 1.64 micron; AlGaAsSb; GaAs; GaAs substrate; InAs; emission wavelength; first-excited state lasing; ground-state photoluminescence; metamorphic buffer layer; quantum dots; Atomic force microscopy; Gallium arsenide; Lattices; Multilevel systems; Photoluminescence; Quantum dot lasers; Quantum dots; Semiconductor lasers; Substrates; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298042
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