DocumentCode
411896
Title
Simulation of dynamic performances of 1300 nm GaInNAs, AlGaInAs and InGaAsP MQW lasers
Author
Yong, J.C.L. ; Rorison, J.M. ; Williams, K.A.
Author_Institution
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fYear
2003
fDate
6-6 June 2003
Abstract
The dynamic performances of 1300 nm MQW GaInNAs, AlGaInAs and InGaAsP lasers under small signal and large signal modulation are simulated and compared at room temperature and high temperature to evaluate their potential as laser sources for high-speed uncooled applications.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; quantum well lasers; 1300 nm; 293 to 298 K; AlGaInAs-InP; GaInNAs-GaAs; InGaAsP-InP; MQW lasers; dynamic performances simulation; high-speed uncooled applications; laser sources; room temperature; signal modulation; Bandwidth; Chemical lasers; Electrons; Laser modes; Optical materials; Performance evaluation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298043
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