DocumentCode :
411896
Title :
Simulation of dynamic performances of 1300 nm GaInNAs, AlGaInAs and InGaAsP MQW lasers
Author :
Yong, J.C.L. ; Rorison, J.M. ; Williams, K.A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fYear :
2003
fDate :
6-6 June 2003
Abstract :
The dynamic performances of 1300 nm MQW GaInNAs, AlGaInAs and InGaAsP lasers under small signal and large signal modulation are simulated and compared at room temperature and high temperature to evaluate their potential as laser sources for high-speed uncooled applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; quantum well lasers; 1300 nm; 293 to 298 K; AlGaInAs-InP; GaInNAs-GaAs; InGaAsP-InP; MQW lasers; dynamic performances simulation; high-speed uncooled applications; laser sources; room temperature; signal modulation; Bandwidth; Chemical lasers; Electrons; Laser modes; Optical materials; Performance evaluation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1298043
Link To Document :
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