Title :
Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature
Author :
Yang, T. ; Cao, J. ; Lee, P. ; Shih, M. ; Shafiiha, R. ; Farrell, S. ; O´Brien, J. ; Shchekin, O. ; Deppe, D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped at room temperature, and lasing occurred in devices that are 2.5 /spl mu/m in diameter and larger.
Keywords :
indium compounds; microdisc lasers; optical pumping; semiconductor quantum dots; 1300 nm; 2.5 micron; 293 to 298 K; InAs; InAs quantum dot active regions; lasing process; microdisks; optical pumping; Electron optics; Gallium arsenide; Optical buffering; Optical pumping; Quantum dot lasers; Quantum dots; Resonance; Stimulated emission; Temperature; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
