DocumentCode
412196
Title
High speed modulation of large-area single-transverse-mode vertical-cavity surface-emitting
Author
Hsueh, Tao-Hung ; Kuo, Hao-Chung ; Lai, Fang I. ; Lai, Li-Hung ; Wang, S.C.
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2003
fDate
6-6 June 2003
Abstract
We report a low Ith (/spl sim/1.5 mA), high power (>5 mW) and speed performance (10 Gb/s operation) single mode GaAs VCSEL employing O+ implantation, MOCVD re-growth and selective oxidation.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; ion implantation; laser modes; optical modulation; oxidation; surface emitting lasers; 1.5 mA; 10 Gbit/s; GaAs; MOCVD re-growth; O+ implantation; O/sup +/; high speed modulation; selective oxidation; single-transverse-mode vertical-cavity surface-emitting; speed performance; Apertures; Gallium arsenide; High speed optical techniques; Implants; Laser modes; Optical sensors; Oxidation; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298347
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