DocumentCode :
412352
Title :
The effect of barrier materials on the band lineup in 1.3/spl mu/m GaAsSb QW heterostructures grown by MOCVD
Author :
Noh, Min Soo ; Chang, Ying-Lan ; Weissman, Robert ; Dupuis, Russell D.
Author_Institution :
The University of Texas at Austin
fYear :
2003
fDate :
6-6 June 2003
Firstpage :
1768
Lastpage :
1769
Keywords :
Capacitive sensors; Fiber lasers; Gallium arsenide; MOCVD; Optical materials; Optical surface waves; Quantum well devices; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1298503
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=412352
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