Title :
Pulsed laser deposition with the Thomas Jefferson national accelerator facility free electron laser: benefits of sub-picosecond pulses with high repetition rate
Author :
Reilly, A. ; Allmond, C. ; Watson, S. ; Gammon, J. ; Kim, J.-G. ; Shinn, M.
Author_Institution :
Dept. of Phys., Coll. of William & Mary, Williamsburg, VA, USA
Abstract :
The TJNAF-FEL presents unique opportunities for the study of pulsed laser deposition due to its parameters: sub-picosecond pulses, high average power, high repetition rate and tunability. This is demonstrated through optical spectroscopy and growth of thin films.
Keywords :
free electron lasers; high-speed optical techniques; optical films; pulsed laser deposition; visible spectroscopy; Thomas Jefferson national accelerator facility free electron laser; high average power; high repetition rate; optical spectroscopy; pulsed laser deposition; sub-picosecond pulse; thin film growth; tunability; Electron accelerators; Free electron lasers; Laser ablation; Optical films; Optical pulses; Pulse amplifiers; Pulsed laser deposition; Sputtering; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
