Title :
Femtosecond pulsed laser deposition of Si on Si(100)
Author :
Hegazy, AI S. ; Elsayed-Ali, H.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Old Dominion Univ., Norfolk, VA, USA
Abstract :
Femtosecond pulsed laser deposition of Si(100) homoepitaxy is studied by in-situ reflection high-energy electron diffraction and ex-situ atomic force microscopy. Step flow occurs on the reconstructed Si(100)-2/spl times/1, while Volmer-Weber growth occurs on the nonreconstructed surface.
Keywords :
atomic force microscopy; elemental semiconductors; high energy electron diffraction; high-speed optical techniques; pulsed laser deposition; silicon; Si; Volmer-Weber growth; ex-situ atomic force microscopy; femtosecond pulsed laser deposition; high-energy electron diffraction; homoepitaxy; in-situ reflection; Atom lasers; Atomic beams; Atomic force microscopy; Atomic layer deposition; Diffraction; Electron microscopy; Optical pulses; Optical reflection; Pulsed laser deposition; Surface reconstruction;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
