DocumentCode :
412431
Title :
Wavelength dependence of femtosecond laser ablation threshold for InP in the 400-2200 nm range
Author :
Borowiec, A. ; Haugen, H.K.
Author_Institution :
Brockhouse Inst. for Mater. Res., McMaster Univ., Hamilton, Ont., Canada
fYear :
2003
fDate :
6-6 June 2003
Abstract :
We present measurements of the wavelength dependence of single and multiple pulse femtosecond laser ablation thresholds for InP in the wavelength range from 400 to 2200 nm.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser ablation; 400 to 2200 nm; InP; laser ablation; multiple pulse femtosecond laser; single pulse femtosecond laser; wavelength measurement; Frequency; Indium phosphide; Laser ablation; Optical amplifiers; Optical harmonic generation; Optical pulses; Photonic band gap; Pulse amplifiers; Pulse measurements; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1298582
Link To Document :
بازگشت