DocumentCode
412512
Title
GaN vertical-cavity surface-emitting laser with an extended cavity
Author
Si-Hyun Park ; Kim, Jaehoun ; Heonsu Jeon ; Tan Sakong ; Lee, Sung-Nam ; Chae, Suhee ; Park, Y.
Author_Institution
Sch. of Phys., Seoul Nat. Univ., South Korea
fYear
2003
fDate
6-6 June 2003
Abstract
An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.
Keywords
III-V semiconductors; gallium compounds; microlenses; optical pumping; surface emitting lasers; wide band gap semiconductors; 293 to 298 K; GaN; GaN vertical-cavity surface-emitting laser; VCSEL device; microlens-integrated extended cavity structure; optical pump; room temperature; threshold excitation intensity; Gallium nitride; Laser excitation; Lenses; Microoptics; Optical pumping; Optical recording; Pump lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298664
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