Title :
Microwave performance of optically controlled MESFETs
Author :
AlSunaidi, M.A. ; Al-Absi, Munir A.
Author_Institution :
Dept. of Electr. Eng., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia
Abstract :
This paper presents the characterization of illuminated high-frequency active devices using a time domain physical simulation model. The model is based on Boltzmann´s Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findings make the model an important tool for the design of active devices under illumination control.
Keywords :
Boltzmann equation; Schottky gate field effect transistors; carrier density; carrier lifetime; microwave field effect transistors; semiconductor device models; time-domain analysis; Boltzmann transport equation; carrier density changes; carrier momentum; carrier transport; illuminated high-frequency active devices; microwave performance; optically controlled MESFET; time domain physical simulation model; Circuit testing; Equations; Lighting; MESFETs; Microwave devices; Optical control; Optical devices; Optical fiber networks; Optical sensors; Stimulated emission;
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
DOI :
10.1109/ICECS.2003.1301754
