DocumentCode
412889
Title
Power characteristics of inductive interconnect
Author
El-Moursy, Magdy A. ; Friedman, Eby G.
Author_Institution
Dept. of Electr. & Comput. Eng., Rochester Univ., NY, USA
Volume
2
fYear
2003
fDate
14-17 Dec. 2003
Firstpage
499
Abstract
The power characteristics of inductive interconnect lines is presented. The matching condition between the driver and the load has an effect on the power consumption since the short-circuit power dissipation may decrease with increasing line width and the dynamic power increases. A tradeoff exists between the short-circuit and dynamic power in inductive interconnects. The short-circuit power increases with wider line widths if the line is underdriven. As the short-circuit power is directly proportional to the signal transition time, an analytic solution for the transition time with an error of less than 15% is presented. The solution can be used in wire sizing synthesis techniques to decrease the overall power dissipation.
Keywords
CMOS logic circuits; RLC circuits; SPICE; circuit complexity; high-speed integrated circuits; integrated circuit interconnections; integrated circuit layout; lumped parameter networks; short-circuit currents; CMOS circuits; CMOS inverter; SPICE; dynamic power; high complexity; high speed integrated circuits; inductive interconnect lines; lumped RLC model; matching condition; on-chip interconnect; power characteristics; power consumption; short-circuit power; short-circuit power dissipation; signal transition time; wire sizing synthesis; Capacitance; Impedance; Integrated circuit interconnections; Load modeling; Power dissipation; Power transmission lines; Propagation losses; Semiconductor device modeling; Signal analysis; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN
0-7803-8163-7
Type
conf
DOI
10.1109/ICECS.2003.1301831
Filename
1301831
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