Effect of the membrane flatness defect on the offset voltage of a silicon piezoresistive pressure sensor

Author

Dibi, Z. ; Boukabache, A. ; Pons, P.

Author_Institution

Departement d´´Electronique, Univ. de Batna, Algeria

Volume

2

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

902

Abstract

In this paper, we study the effect of the membrane sides parallelism defect on the offset voltage of a silicon piezoresistive pressure sensor. The study is based on an experimental profile plot of the membrane bottom of 30 μm thickness realised in LAAS. By assuming dimensionless gauges implanted on the membrane, the value of the offset voltage was quantified as a function of average thickness of the membrane. In spite of the low values of the parallelism defect (typically about 1% of the membrane thickness), it is shown that there is an offset voltage which is relatively high and perfectly quantified.

Keywords

elemental semiconductors; membranes; microsensors; piezoresistive devices; pressure sensors; silicon; 30 micron; Si; implanted dimensionless gauges; membrane bottom profile plot; membrane flatness defect; membrane sides parallelism defect; membrane thickness; offset voltage; silicon piezoresistive pressure sensor; Anisotropic magnetoresistance; Biomembranes; Bridge circuits; Chemicals; Etching; Piezoresistance; Piezoresistive devices; Silicon; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301933

Filename

1301933