Title :
Dual-polarity high voltage generator design for non-volatile memories
Author :
Wang, Chua-Chin ; Tseng, Yih-Long ; Chen, Tian-Hau ; Hu, Ron
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
A novel voltage generator using 4 clocks with two different phases is presented in this work to provide a high voltage supply required by non-volatile memories during programming mode and erase mode operations. Both the positive and negative polarities of the voltage are generated to serve as the programming voltage and the erase voltage, respectively. The proposed design is carried out by gated pass transistors and switched capacitors. The regulated generated voltages which the proposed design can provide is +11.7 V and -11.6 V given VDD = 2.5 V when the circuit is implemented by TSMC 0.25 μm 1P5M CMOS technology. The maximum power dissipation is estimated to be 3.8 mW given 12.5 MHz clocks.
Keywords :
CMOS memory circuits; flash memories; power integrated circuits; power supplies to apparatus; power supply circuits; CMOS technology; Dickson charge pump design; dual-polarity high voltage generator; erase mode operations; gated pass transistors; high voltage supply; negative polarities; nonvolatile memories; positive polarities; programming mode operations; regulated generated voltages; switched capacitors; two-phase clocking; CMOS memory circuits; CMOS technology; Capacitors; Charge pumps; Clocks; EPROM; Nonvolatile memory; Power dissipation; Random access memory; Threshold voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
DOI :
10.1109/ICECS.2003.1302023
