Title :
Quantum well and bulk quasi-Fermi level behaviour under illuminated conditions
Author :
Ekins-Daukes, N.J. ; Calder, C.D.J. ; Ballard, I. ; Barnham, K.W.J. ; Nelson, John ; Roberts, J.S. ; Hill, G.
Author_Institution :
Dept. of Exp. Solid State Phys., Imperial Coll., London, UK
Abstract :
An experimental investigation into the quasi-Fermi level behaviour of multi quantum well solar cells is presented, and for the first time, data is presented under illuminated conditions. Using a spectroscopic technique, it is possible to independently extract the QW and bulk quasi-fermi level separation under both bulk and QW illumination. It is shown that under conditions approximating solar illumination, the bulk-quasi-fermi level separation is larger than that in the QW.
Keywords :
Fermi level; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; luminescence; quantum well devices; semiconductor quantum wells; solar cells; GaAs-InGaAs; carrier mobility; luminescence; multiquantum well solar cell; quantum well illumination; quasifermi level separation; solar illumination; spectroscopic technique;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
