• DocumentCode
    413436
  • Title

    Quantum well and bulk quasi-Fermi level behaviour under illuminated conditions

  • Author

    Ekins-Daukes, N.J. ; Calder, C.D.J. ; Ballard, I. ; Barnham, K.W.J. ; Nelson, John ; Roberts, J.S. ; Hill, G.

  • Author_Institution
    Dept. of Exp. Solid State Phys., Imperial Coll., London, UK
  • Volume
    3
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    2702
  • Abstract
    An experimental investigation into the quasi-Fermi level behaviour of multi quantum well solar cells is presented, and for the first time, data is presented under illuminated conditions. Using a spectroscopic technique, it is possible to independently extract the QW and bulk quasi-fermi level separation under both bulk and QW illumination. It is shown that under conditions approximating solar illumination, the bulk-quasi-fermi level separation is larger than that in the QW.
  • Keywords
    Fermi level; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; luminescence; quantum well devices; semiconductor quantum wells; solar cells; GaAs-InGaAs; carrier mobility; luminescence; multiquantum well solar cell; quantum well illumination; quasifermi level separation; solar illumination; spectroscopic technique;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305148