• DocumentCode
    413443
  • Title

    Selective energy contacts for potential application to hot carrier PV cells

  • Author

    Conibeer, Gavin ; Chu-Wei Jiang ; Green, Martin ; Harde, Nils ; Straub, Axel

  • Author_Institution
    Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
  • Volume
    3
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    2730
  • Abstract
    Hot carrier solar cells offer the possibility of enhanced efficiency by slowing the carrier cooling caused by phonon interaction. To be effective such carriers must be collected over a very small energy range with selective energy contacts. The current work concludes that the key requirement for such contacts is a very narrow selective energy range and that the energy of carriers is confined in all three dimensions not just longitudinally. The paper then discusses some structures that may be able to achieve this together with the direction of preliminary experimental work. The structures considered exploit resonant tunnelling and include defect levels as confined levels in a barrier matrix and interband degenerate tunnel junctions.
  • Keywords
    Fermi level; band structure; defect states; hot carriers; narrow band gap semiconductors; photovoltaic cells; resonant tunnelling; solar absorber-convertors; solar cells; barrier matrix; carrier cooling; defect level; hot carrier PV cells; hot carrier solar cells; interband degenerate tunnel junctions; phonon interaction; photovoltaic; resonant tunnelling; selective energy contact;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305155