DocumentCode :
413443
Title :
Selective energy contacts for potential application to hot carrier PV cells
Author :
Conibeer, Gavin ; Chu-Wei Jiang ; Green, Martin ; Harde, Nils ; Straub, Axel
Author_Institution :
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
Volume :
3
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
2730
Abstract :
Hot carrier solar cells offer the possibility of enhanced efficiency by slowing the carrier cooling caused by phonon interaction. To be effective such carriers must be collected over a very small energy range with selective energy contacts. The current work concludes that the key requirement for such contacts is a very narrow selective energy range and that the energy of carriers is confined in all three dimensions not just longitudinally. The paper then discusses some structures that may be able to achieve this together with the direction of preliminary experimental work. The structures considered exploit resonant tunnelling and include defect levels as confined levels in a barrier matrix and interband degenerate tunnel junctions.
Keywords :
Fermi level; band structure; defect states; hot carriers; narrow band gap semiconductors; photovoltaic cells; resonant tunnelling; solar absorber-convertors; solar cells; barrier matrix; carrier cooling; defect level; hot carrier PV cells; hot carrier solar cells; interband degenerate tunnel junctions; phonon interaction; photovoltaic; resonant tunnelling; selective energy contact;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305155
Link To Document :
بازگشت