DocumentCode
413443
Title
Selective energy contacts for potential application to hot carrier PV cells
Author
Conibeer, Gavin ; Chu-Wei Jiang ; Green, Martin ; Harde, Nils ; Straub, Axel
Author_Institution
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
Volume
3
fYear
2003
fDate
18-18 May 2003
Firstpage
2730
Abstract
Hot carrier solar cells offer the possibility of enhanced efficiency by slowing the carrier cooling caused by phonon interaction. To be effective such carriers must be collected over a very small energy range with selective energy contacts. The current work concludes that the key requirement for such contacts is a very narrow selective energy range and that the energy of carriers is confined in all three dimensions not just longitudinally. The paper then discusses some structures that may be able to achieve this together with the direction of preliminary experimental work. The structures considered exploit resonant tunnelling and include defect levels as confined levels in a barrier matrix and interband degenerate tunnel junctions.
Keywords
Fermi level; band structure; defect states; hot carriers; narrow band gap semiconductors; photovoltaic cells; resonant tunnelling; solar absorber-convertors; solar cells; barrier matrix; carrier cooling; defect level; hot carrier PV cells; hot carrier solar cells; interband degenerate tunnel junctions; phonon interaction; photovoltaic; resonant tunnelling; selective energy contact;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305155
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