Title :
Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure
Author :
Alguno, A. ; Usami, N. ; Ujihara, T. ; Fujiwara, K. ; Sawano, K. ; Sazaki, G. ; Shiraki, Y. ; Nakajima, K.
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
We report on the improved external quantum efficiency of solar cells in the infrared region with self-assembled Ge dots stacked in multilayer structure embedded within the intrinsic region of a p-i-n diode. This quantum efficiency was found to increase with increasing number of stacking. This indicates that additional photocarriers are generated in the Ge dots and have a high probability of escaping from the dots and/or at Ge/Si interfaces without significant recombination under the influence of the internal electric field.
Keywords :
elemental semiconductors; germanium; multilayers; p-i-n diodes; photoluminescence; self-assembly; semiconductor quantum dots; silicon; solar cells; spectral line shift; thermal diffusion; Ge dots stacking; Ge-Si; Ge/Si interfaces; external quantum efficiency; infrared region; internal electric field influence; multilayer structure; p-i-n diode; photocarriers; photocarriers generation; self-assembly; solar cells;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
