• DocumentCode
    413447
  • Title

    Potentially modulated multi-quantum well solar cells with improved dark current characteristics

  • Author

    Shiotsuka, Naoyuki ; Takeda, Toru ; Okada, Yoshitaka

  • Author_Institution
    Inst. of Appl. Phys., Tsukuba Univ., Japan
  • Volume
    3
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    2750
  • Abstract
    The predicted performance of multi-quantum well (MQW) solar cells relies not only on a high material quality with minimum non-radiative recombination losses at QWs heterointerfaces, but also an efficient escape rate of photo-generated carriers out of QWs into the "base" region with minimum radiative losses within QWs. We propose and investigate potentially modulated InGaAs/GaAs MQW solar cells, for which the MQW structure is modified from a series of conventional square-shaped QWs to step-like modulated QWs. We show that radiative recombination and forward-bias dark currents are significantly reduced in potentially modulated MQW solar cells.
  • Keywords
    III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; photoluminescence; quantum well devices; solar cells; GaAs; InGaAs-GaAs; InGaAs-GaAs MQW solar cells; QW heterointerface; forward-bias dark currents; nonradiative recombination loss; photogenerated carriers; photoluminescence; potentially modulated multiple quantum well solar cells; square-shaped QW; step-like modulated QW;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305160