Study of structure and temperature-dependent conductivity in n-type nc-Si:H thin films

Author

Gullanar, M.H. ; Zhang, Y.H. ; Qian, Z.G. ; Cui, R.Q. ; Shen, W.Z.

Volume

3

fYear

2003

fDate

18-18 May 2003

Firstpage

2754

Abstract

We have employed micro-Raman scattering and conductivity measurements to investigate the structural properties in phosphorus doped nc-Si:H thin films deposited by plasma enhanced chemical vapor deposition. The grain size obtained from Raman spectra hardly changes with the doping concentration except for the highly doped sample, which is consistent with the results from X-ray diffraction measurements. The yielded strain values are found to relax with the increase of doping concentration. In addition, the comparison study of grain size distribution in both the doped and intrinsic nc-Si:H thin films reveals more ordered structures in the doped samples. The observed structural properties by the optical measurements have been further confirmed by the electrical conductivity measurements.

Keywords

Raman spectra; X-ray diffraction; amorphous semiconductors; dark conductivity; doping profiles; elemental semiconductors; grain size; impurity distribution; internal stresses; nanostructured materials; phosphorus; plasma CVD coatings; semiconductor thin films; silicon; Raman scattering; Raman spectra; Si:H,P; X-ray diffraction; doping concentration; electrical conductivity; grain size; highly doped materials; n-type nanocrystalline-Si:H thin films; optical properties; phosphorus doped thin films; plasma chemical vapor deposition; structural properties; temperature dependent conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305161