DocumentCode :
413452
Title :
Four terminal cell analysis of amorphous/microcrystalline Si tandem cell
Author :
Kondo, Michio ; Nagasaki, Suguru ; Miyahara, Hiroomi ; Matsui, Takuya ; Fujibayashi, Takeji ; Sat, Aiko ; Matsuda, Akihisa
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Japan
Volume :
3
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
2779
Abstract :
For the optimum design of hydrogenated amorphous/microcrystalline silicon (a-Si:H//spl mu/c-Si:H) tandem solar cells, we have developed an analysis method using a four terminal structure with the TCO (ZnO:Ga) layer as an intermediate electrode. The top and bottom cell characteristics (IV-curve and spectral response) can be measured individually. The interlayer thickness dependence of the cell performance indicates the optical interference at the interlayer affects not only the short circuit current but also the open circuit voltage particularly in the bottom cell. It was also found that the shallower texture of 6% haze Asahi-U and lower carrier density of the interlayer are beneficial for the tandem cell. The lower carrier density results in the open circuit voltage of 0.58 V for the bottom cell. The optical, electrical and structural roles of the interlayer are discussed.
Keywords :
II-VI semiconductors; amorphous semiconductors; carrier density; elemental semiconductors; gallium; hydrogen; short-circuit currents; silicon; solar cells; zinc compounds; 0.58 V; Si:H; ZnO:Ga; four terminal cell analysis; four terminal structure; hydrogenated amorphous-microcrystalline silicon tandem solar cells; interlayer thickness; intermediate electrode; lower carrier density; open circuit voltage; optical interference; optimum design; shallower texture; short circuit current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305165
Link To Document :
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