Electronic properties of wide-gap Cu(In,Ga)(Se,S)/sub 2/ thin-film solar cells

The contribution discusses the requirements that have to be fulfilled by wide-gap chalcopyrite solar cells in order to enable improved module performance and in view of possible all-chalcopyrite tandem solar cells. Recent research efforts for improving the performance of wide-gap chalcopyrite solar cell materials are reviewed. The article also discusses progress in understanding the electronic transport properties of this material class with a special focus on differences that occur in the materials and device properties when turning from standard Cu(In,Ga)Se/sub 2/ to the wide-gap alloys.