Amorphous/crystalline silicon heterojunction solar cells with intrinsic buffer layer

Author

Froitzheim, A.M. ; Scherff, M.L.D. ; Ulyashin, A. ; Milch, O. ; Schmidt, M. ; Fahrne, W.R. ; Fuhs, W.

Author_Institution

Hahn-Meitner-Inst., Berlin, Germany

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

180

Abstract

Simple structure TCO/a-Si:H(n)/c-Si(p) heterojunction solar cells with varied emitters are investigated by current-voltage-characteristics (IV), photoluminescence (PL) and ultra violet photo electron spectroscopy (UPS). A confirmed efficiency of 16.2% on flat substrates is reached. Additionally, cells have been prepared with intrinsic a-Si:H(i) buffer layers, in order to passivate the proper pretreated wafers. This passivation results in an enhanced PL signal and UPS measurements indicate a reduced density of defect states in ultra thin a-Si:H(i) compared to a-Si:H(n) layers.

Keywords

amorphous semiconductors; defect states; elemental semiconductors; passivation; photoluminescence; semiconductor heterojunctions; silicon; solar cells; ultraviolet photoelectron spectra; 16.2 percent; TCO/a-Si:H(n)/c-Si(p) heterojunction; amorphous/crystalline silicon heterojunction; current-voltage-characteristics; defect state; efficiency; emitter; flat substrate; intrinsic buffer layer; passivation; photoluminescence; pretreated wafer; solar cell; ultra violet photo electron spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305251