Title :
Solar cells heterostructures with InAs quantum dots obtained by liquid phase epitaxy
Author :
Maronchuk, LE ; Erochin, S.Yu. ; Kulutkina, T.F. ; Kurak, V.V. ; Maronchuk, A.I. ; Tsybulenko, V.V.
Author_Institution :
Kherson State Tech. Univ., Ukraine
Abstract :
Features of growing of heterostructures with quantum dots by the method of pulse cooling of saturated solution-melt are considered. Taking into account that the presence of solvent causes Volmer-Weber growth mechanism of quantum dot (QD) in the liquid phase, an estimation of QD size dependence from the growth conditions have been conducted. Photoluminescence spectra of single-layer and multi-layer structures with InAs QDs on GaAs substrates have been investigated. It was shown that the efficiency of sunlight conversion could be increased by 10.5 % at forming of InAs quantum dots with diameter of 6 nm in GaAs matrix.
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; photoluminescence; semiconductor quantum dots; solar cells; sunlight; 10.5 percent; 6 nm; InAs-GaAs; Volmer-Weber growth mechanism; growth condition; liquid phase epitaxy; photoluminescence; pulse cooling; quantum dot; solar cells heterostructure; sunlight conversion;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
