Insights into the degradation mechanisms of CIGSSe devices based on different heterojunctions

Author

Bär, M. ; Rusu, M. ; Reiß, J. ; Glatzel, Th ; Sadewasser, S. ; Bohne, W. ; Strub, E. ; Muffler, J.J. ; Lindner, S. ; Röhrich, J. ; Niesen, T.P. ; Karg, F. ; Lux-Steiner, M. Ch ; Fischer, Ch H.

Author_Institution

Hahn-Meitner-Inst., Berlin, Germany

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

335

Abstract

Uncapsulated CdS buffered chalcopyrite solar cells as well as devices where the buffer and the intrinsic part of the rf-sputtered ZnO window bi-layer is replaced by a ZnO window extension layer were exposed to damp-heat (DH) conditions. In order to investigate the degradation mechanisms they were characterized by J(V)-measurements under standard test conditions and at different temperatures (200-330 K) and illuminations (0.1-100 mW/cm/sup 2/) as well as by quantum efficiency, ultrahigh vacuum Kelvin probe force microscopy and elastic recoil detection analysis before and after DH. All measurements reveal a significant change of the corresponding characteristics induced by DH.

Keywords

II-VI semiconductors; copper compounds; gallium compounds; indium compounds; ion microprobe analysis; solar cells; sputter deposition; ternary semiconductors; zinc compounds; 200 to 330 K; CdS-Cu(InGa)(SSe)/sub 2/; ZnO; ZnO window extension layer; chalcopyrite solar cell; damp-heat condition; degradation mechanism; elastic recoil detection analysis; quantum efficiency; standard test condition; ultrahigh vacuum Kelvin probe force microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305288