Title :
Insights into the degradation mechanisms of CIGSSe devices based on different heterojunctions
Author :
Bär, M. ; Rusu, M. ; Reiß, J. ; Glatzel, Th ; Sadewasser, S. ; Bohne, W. ; Strub, E. ; Muffler, J.J. ; Lindner, S. ; Röhrich, J. ; Niesen, T.P. ; Karg, F. ; Lux-Steiner, M. Ch ; Fischer, Ch H.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
Uncapsulated CdS buffered chalcopyrite solar cells as well as devices where the buffer and the intrinsic part of the rf-sputtered ZnO window bi-layer is replaced by a ZnO window extension layer were exposed to damp-heat (DH) conditions. In order to investigate the degradation mechanisms they were characterized by J(V)-measurements under standard test conditions and at different temperatures (200-330 K) and illuminations (0.1-100 mW/cm/sup 2/) as well as by quantum efficiency, ultrahigh vacuum Kelvin probe force microscopy and elastic recoil detection analysis before and after DH. All measurements reveal a significant change of the corresponding characteristics induced by DH.
Keywords :
II-VI semiconductors; copper compounds; gallium compounds; indium compounds; ion microprobe analysis; solar cells; sputter deposition; ternary semiconductors; zinc compounds; 200 to 330 K; CdS-Cu(InGa)(SSe)/sub 2/; ZnO; ZnO window extension layer; chalcopyrite solar cell; damp-heat condition; degradation mechanism; elastic recoil detection analysis; quantum efficiency; standard test condition; ultrahigh vacuum Kelvin probe force microscopy;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
