DocumentCode
413570
Title
Potential for light trapping in Cu(In,Ga)Se/sub 2/ solar cells
Author
Malmström, Jonas ; Lundberg, Olle ; Stolt, Lars
Author_Institution
Angstrom Solar Center, Uppsala Univ., Sweden
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
344
Abstract
We have analyzed the potential for light trapping in Cu(In,Ga)Se/sub 2/ cells. Key quantities such as back contact reflectance and reflectance at the absorber-window interface are discussed and calculated from measured optical properties. Two model cases, perfectly specular interfaces and Lambertian scattering from the absorber front and back surfaces, are compared in terms of integrated AM 1.5 absorption in the absorber as a function of absorber thickness d/sub a/ for Ag, TiN, Mo back reflectors. Relative to the Mo reflector in the specular model, the potential gain of an Ag reflector at d/sub a/ = 0.5 /spl mu/m is estimated to 2.0 and 3.5 mA/cm/sup 2/ in the specular and scattering cases, respectively. Improved long wavelength quantum efficiency is experimentally demonstrated with a TiN back reflector. The resulting gain in J/sub sc/ is 0.8 mA/cm/sup 2/ at 0.45 /spl mu/m absorber thickness, in accordance with our model results.
Keywords
copper compounds; gallium compounds; indium compounds; short-circuit currents; solar absorber-convertors; solar cells; ternary semiconductors; 0.45 mum; 0.5 mum; Cu(InGa)Se/sub 2/; Lambertian scattering; absorber-window interface; back contact reflectance; back reflector; light trapping; perfectly specular interface; potential gain; quantum efficiency; solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305290
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